Foxconn has recently developed new technologies to increase the quantum efficiency of LEDs. The US patent application will challenge the current process technology of LED chip factories. Foxconn's new technology to improve the quantum efficiency of LEDs is through the nanoparticle doping I confining layer, allowing the nitriding (InGaN) and aluminum arsenide (AlGaAs) active layers. The lattice arrangement is smoother and more ordered. Researchers claim that hydrogenated SiC can be used as a substrate material for LEDs to effectively improve the heat dissipation of LED chips.
In addition, Foxconn also filed two LED patent applications on May 28, including the use of InGaN or AlGaAs as the active layer, single quantum well or multiple quantum well layers. The difference between Foxconn's LED and the general LED epitaxial structure is that the former is doped with nanoparticles of 20-200 nm in diameter on the two sides of the active layer.
The inventor, Ga-Lane Chen, is the chief technology officer of Hon Hai Group. He pointed out in the patent application that the nanoparticles incorporated may be silicon nitride (SiN), silicon oxide (SiO), and oxidized (GaO). ), Nitriding (AlN) or Boron Nitride (BN), will help improve the quality of LED die. The patent states that nanoparticles can change the lattice constant of the n-type and p-type I-limit layers, thereby reducing the lattice strain. By reducing the strain, depositing an active layer on the n-type I confinement layer and depositing a p-type I-limit layer on the active layer can reduce the chance of lattice dislocations. In addition, the reduction in lattice strain also reduces the stress between the active layer and the ?I confinement layer, thereby improving quantum efficiency.
In addition, Foxconn also filed two LED patent applications on May 28, including the use of InGaN or AlGaAs as the active layer, single quantum well or multiple quantum well layers. The difference between Foxconn's LED and the general LED epitaxial structure is that the former is doped with nanoparticles of 20-200 nm in diameter on the two sides of the active layer.
The inventor, Ga-Lane Chen, is the chief technology officer of Hon Hai Group. He pointed out in the patent application that the nanoparticles incorporated may be silicon nitride (SiN), silicon oxide (SiO), and oxidized (GaO). ), Nitriding (AlN) or Boron Nitride (BN), will help improve the quality of LED die. The patent states that nanoparticles can change the lattice constant of the n-type and p-type I-limit layers, thereby reducing the lattice strain. By reducing the strain, depositing an active layer on the n-type I confinement layer and depositing a p-type I-limit layer on the active layer can reduce the chance of lattice dislocations. In addition, the reduction in lattice strain also reduces the stress between the active layer and the ?I confinement layer, thereby improving quantum efficiency.
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