Taiwan's LED output value is optimistic about future growth

Recently, according to information from the Taiwan Industrial Technology Research Institute, the output value of Taiwan's LED in 2010 will grow by 40% compared with 2009, reaching NT$80 billion. The LCD display backlight market is a major driving force for growth. It is estimated that in 2014, Taiwan's LED output value is expected to jump sharply to NT$192 billion, with a total compound growth rate of 23.57% from 2008 to 2014.

It is understood that in the current global LED market share, Japan ranks first with 41%, and Taiwan takes advantage of production and cost reduction, ranking second with 25%. In terms of exports, mainland China accounted for 66% of the total, ranking first among Taiwan's LED export destinations. Due to the demand for TV backlight modules, South Korea's dependence increased, accounting for 11%, Japan 9%, the United States and Malaysia were 3%, and the other 8%.

ITRI ​​believes that although the LED output value continues to climb in 2010, it is facing a decline in interest rates. Despite this, Taiwanese manufacturers are expected to become the world's largest LED market in terms of output expansion and economic scale, and Taiwan's Taiwanese factory has the advantage of geographical proximity, and its future growth is promising.

In addition, ITRI also said that thanks to the large and medium-sized LED backlight module and lighting demand, Q2 chip and package revenues both grew significantly in 2010, but the growth rate of chip end declined after Q3 was affected by TV demand is not as expected. And the package only grew by 2.98%.

SCHOTTKY

The Schottky Diode is another type of semiconductor diode which can be used in a variety of wave shaping, switching and rectification applications the same as any other junction diode. The main adavantage is that the forward voltage drop of a Schottky Diode is substantially less than the 0.7 volts of the conventional silicon pn-junction diode.

Schottky diodes have many useful applications from rectification, signal conditioning and switching, through to TTL and CMOS logic gates due mainly to their low power and fast switching speeds.


the Schottky Diode also known as a Schottky Barrier Diode is a solid-state semiconductor diode in which a metal electrode and an n-type semiconductor form the diodes ms-junction giving it two major advantages over traditional pn-junction diodes, a faster switching speed, and a low forward bias voltage.

The metal–to-semiconductor or ms-junction provides a much lower knee voltage of typically 0.3 to 0.4 volts compared against a value of 0.6 to 0.9 volts seen in a standard silicon base pn-junction diode for the same value of forward current.

Variations in the metal and semiconductor materials used for their construction means that silicon carbide (SiC) Schottky diodes are able to turn [ON" with with a forward voltage drop as little as 0.2 volts with the Schottky diode replacing the less used germanium diode in many applications requiring a low knee voltage.

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